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Lynn, Shane, Ringwood, John and MacGearailt, Niall (2012) Gaussian Process Regression for Virtual Metrology of Plasma Etch. In: Irish Signals and Systems Conference 2010, June, 2010, Cork.
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Abstract
Plasma etch is a complex semiconductor manufacturing process in which
material is removed from the surface of a silicon wafer using a gas in plasma form.
As the process etch rate cannot be measured easily during or after processing, virtual
metrology is employed to predict the etch rate instantly using ancillary process variables.
Virtual metrology is the prediction of metrology variables using other easily accessible
variables and mathematical models. This paper investigates the use of Gaussian process
regression as a virtual metrology modelling technique for plasma etch data.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Keywords: | Plasma etch; virtual metrology; Gaussian process regression; |
| Academic Unit: | Faculty of Science and Engineering > Electronic Engineering |
| Item ID: | 3617 |
| Depositing User: | Professor John Ringwood |
| Date Deposited: | 01 May 2012 14:04 |
| Refereed: | Yes |
| Related URLs: | |
| URI: | https://mu.eprints-hosting.org/id/eprint/3617 |
| Use Licence: | This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here |
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