Lynn, Shane, Ringwood, John and MacGearailt, Niall (2012) Global and Local Virtual Metrology Models for a Plasma Etch Process. IEEE Transactions on Semiconductor Manufacturing, 25 (1). pp. 94-103. ISSN 0894-6507
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Abstract
Virtual metrology (VM) is the estimation of metrology
variables that may be expensive or difficult to measure using
readily available process information. This paper investigates the
application of global and local VM schemes to a data set recorded
from an industrial plasma etch chamber. Windowed VM models
are shown to be the most accurate local VM scheme, capable
of producing useful estimates of plasma etch rates over multiple
chamber maintenance events and many thousands of wafers. Partial
least-squares regression, artificial neural networks, and Gaussian
process regression are investigated as candidate modeling
techniques, with windowed Gaussian process regression models
providing the most accurate results for the data set investigated.
Item Type: | Article |
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Keywords: | Gaussian process regression; local modeling; neural network applications; plasma etch; virtual metrology; VM; |
Academic Unit: | Faculty of Science and Engineering > Electronic Engineering |
Item ID: | 3560 |
Depositing User: | Professor John Ringwood |
Date Deposited: | 30 Mar 2012 14:37 |
Journal or Publication Title: | IEEE Transactions on Semiconductor Manufacturing |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Related URLs: | |
URI: | https://mu.eprints-hosting.org/id/eprint/3560 |
Use Licence: | This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here |
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