Tracking plasma etch process variations using Principal Component Analysis of OES data.

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Ma, Beibei, McLoone, Sean F. and Ringwood, John (2007) Tracking plasma etch process variations using Principal Component Analysis of OES data. In: ICINCO 2007, 4th International Conference on Information in Control, Automation and Robotics, 9 - 12 May, 2007, Angers, France. (Unpublished)

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Abstract

This paper explores the application of principal component analysis (PCA) to the monitoring of within-lot and between-lot plasma variations that occur in a plasma etching chamber used in semiconductor manufacturing, as observed through Optical Emission Spectroscopy (OES) analysis of the chamber exhaust. Using PCA, patterns that are difficult to identify in the 2048-dimension OES data are condensed into a small number of principle components (PCs). It is shown, with the aid of experimental data, that by simply tracking changes in the directions of these PCs both inter-lot and intra-lot patterns can be identified.

Item Type:	Conference or Workshop Item (Paper)
Keywords:	Semiconductor manufacturing; Plasma etching; Metal etching; Optical emission spectroscopy (OES); Principal component analysis (PCA); Batch processing;
Academic Unit:	Faculty of Science and Engineering > Electronic Engineering
Item ID:	1424
Depositing User:	Professor John Ringwood
Date Deposited:	08 Jun 2009 13:11
Refereed:	Yes
Related URLs:	Organisation
URI:	https://mu.eprints-hosting.org/id/eprint/1424
Use Licence:	This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here

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Tracking plasma etch process variations using Principal Component Analysis of OES data.

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